| PART |
Description |
Maker |
| MRF1507 MRF1507T1 |
LATERAL NCHANNEL BROADBAND RF POWER MOSFET
|
MOTOROLA[Motorola, Inc]
|
| IRFY230 IRFY230-QR-BR1 IRFY230-JQR-BR1 |
9 A, 200 V, 0.49 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA HERMETIC SEALED, METAL, TO-257AA, 3 PIN
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
NCHANNEL POWER MOSFET FOR HIREL APPLICATIONS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| IRFM1310ST |
NCHANNEL POWER MOSFET
N-CHANNEL POWER MOSFET
|
SemeLAB
SEME-LAB[Seme LAB]
|
| NTP27N06 NTB27N06 NTB27N06T4 |
Power MOSFET 27 Amps, 60 Volts N-Channel TO-220 and D2PAK
Power MOSFET 27 Amps, 60 Volts N?Channel TO?220 and D2PAK
Power MOSFET 27 Amps / 60 Volts NChannel TO220 and D2PAK
LASER MOD 670NM .95MW MVP ROUND
LASER MOD 635NM 4.9MW VHK ROUND 27 A, 60 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| 3VD156600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics
|
| 3VD297600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-10EG58MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| MAX2686EWST MAX2688EWST 34902A CB1CFU4715533290653 |
GPS/GNSS Low-Noise Amplifiers
16-CHANNEL REED MULTIPLEXER MODULE FOR USE WITH: 34970A DATA ACQUISITION/SWITCH UNIT RoHS Compliant: NA
100GHz WDM Filter Components for OADM 100GHz的波分复用滤波器元件的光分插复用
100GHz WDM Filter Chips 100GHz的波分复用器芯片
50GHz WDM Filter Chips 50GHz的波分复用器芯片
10 Channel Optical Add/Drop Multiplexer with Band VOAs 10频道光分/有带VOAs复用
|
Maxim Integrated Products
Samsung Semiconductor Co., Ltd.
Avago Technologies, Ltd.
Molex, Inc.
Electronic Theatre Controls, Inc.
Vicor, Corp.
|
